Numerical Simulation of 300mm CZ Silicon Crystal Growth with Axial Magnetic Fields-Reference-Cited by-同舟云学术

Numerical Simulation of 300mm CZ Silicon Crystal Growth with Axial Magnetic Fields

Published:2011-06 Issue: Volume:689 Page:179-183
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Xu Wen Ting¹,Tu Hai Ling¹,Chang Qing²,Xiao Qing Hua³,Dai Xiao Lin³,Liu Yun Xia³,Li Zong Feng⁴,Chang Lin⁴,Liu Wei Da³

Affiliation:

1. General Research Institute for Nonferrous Metals

2. Inner Mongolia University of Technology

3. General Research Institute for Non-ferrous Metals (GRINM) Semiconductor Materials Co.Ltd.

4. General Research Institute for Non-ferrous Metals

Abstract

We studied the optimization of 300mm CZ silicon crystal growth in 28 inch hot zone with axial magnetic field. The convex of melt-crystal interfaces toward to the crystal are observed in our simulations under different growth velocities (0.3mm/min, 0.5mm/min and 0.65mm/min). The convections in melt were illustrated under different growth rates and intensities of magnetic field. The growth rate of 0.5mm/min and axial magnetic fields intensity of 0.3T were recommended as an appropriate control condition.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.689.179.pdf

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