Affiliation:
1. Friedrich-Alexander-Universität Erlangen-Nürnberg
2. Acreo AB
3. Japan Atomic Energy Agency
4. QST
5. Kyoto University
Abstract
Intrinsic defects in 3C-SiC are generated by implantation of H+- and He+-ions or irra¬diation with high energy electrons. The defect parameters and the thermal stability of the observed defects are determined. The capture-cross-section of the W6-center is directly measured by variation of the filling pulse length. The charge state of the W6-center is obtained from double-correlated DLTS investigations according to the Poole-Frenkel effect.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. H. Kuwabara, S. Yamada: phys. stat. sol. (a) Vol. 30 (1975), p.739.
2. S. A. Podlasov, V. G. Sidyakin: Sov. Phys. Semicond. Vol. 20 (1986), p.462.
3. V. Nagesh, J. W. Farmer, R. F. Davis, H. S. Kong: Appl. Phys. Lett. Vol. 50 (1987), p.1138.
4. V. Nagesh, J. W. Farmer, R. F. Davis, H. S. Kong: Radiat Effects and Defects in Solids Vol. 112 (1990), p.77.
5. K. Zekentes, M. Kayiambaki, G. Constantinidis: Appl. Phys. Lett. Vol. 66 (1995), p.3015.
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