Study on 1/f γ Noise Characterization of Metallic Interconnection Electromigration

Abstract

Metallic interconnection electromigration is a common phenomenon in integral circuit, and it influences circuit reliability seriously as rapid miniaturization of circuit size. Resistance is a traditional electromigration characterization parameter, but it requires strict testing condition, and it is not sensitive to vacancies accumulation at early stage of electromigration. Some recent researches show that noise is very sensitive to metallic thin film electromigration, it can be used as an effective inspect method for electromigration. So noise wais used to characterize damage degree of Al thin film electromigration in this paper., Tthe results showeds both noise amplitude and frequency exponent increased during electromigration process, and when void nucleation occuredhappens, frequency exponent increased sharply. noise can also reflect electromigration degree under different environment temperature. Through comparing with resistance, noise can be proved a better characterization parameter for electromigration