Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates

Abstract

We have developed a horizontal hot-wall reactor for growing extremely uniform epilayers on 100-mm diameter SiC substrates using a novel supplemental reagent source. Doping and thickness variations of 2% and 1% s / mean, respectively, have been demonstrated. The typical defect density is 2 cm-2. We describe the growth cell in detail and discuss the development of the design and process to produce these very uniform epilayers.