Ionization Energies of Phosphorus Donors in 6H-SiC
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Published:2008-09
Issue:
Volume:600-603
Page:441-444
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Schmid Frank1,
Semmelroth Kurt1,
Krieger Michael2,
Weber Heiko B.2,
Pensl Gerhard2,
Haller Eugene E.3
Affiliation:
1. University of Erlangen-Nürnberg
2. Friedrich-Alexander-Universität Erlangen-Nürnberg
3. University of California
Abstract
6H-SiC was doped with phosphorus (P) donors by neutron transmutation. IR
transmission spectra were taken in the temperature range from 6 K to 300 K. A great number of
absorption lines is observed at temperatures below 140 K; these lines are attributed to transitions of
the donor electron between ground states and bound excited states of P-related donors. Based on
Faulkner's theory, three series of effective-mass-like states (P1, P2, P3) could be identified. The
corresponding ground state energies are: E(P1) = EC - 91.5 meV, E(P2) = EC - 81.8 meV,
E(P3) = EC - 73.5 meV.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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