Abstract
Amorphous silicon (a-Si) film crystallized by Ni-induced lateral crystallization under static electric field was analyzed. It has been demonstrated that Ni-induced lateral crystallization of a-Si is directional with electric field. Moreover, there exists a critical value of electric field strength, below which the rate of Ni-induced lateral crystallization of a-Si increases remarkably with the increase of field strength, while above which the rate will decrease instead. This phenomenon can be interpreted well based on electromigration effect.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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