Affiliation:
1. Chinese Academy of Sciences
Abstract
A novel method to grow silicon dioxide layers for passivating the silicon surface is given more attention. SiO2was grown by applying a positive voltage across silicon wafers in a nitric acid solution at low temperature. After annealing in N2media at 900°C for 20min, excellent surface passivation was achieved. The maximum effective lifetime of the silicon arrived at 29.8μs and 29.75μs, which was three times the value of silicon without passivation. The effective lifetime of other types of silicon could be ten times the initial value without the silicon dioxide. A comparison study of the effect of the FGA, annealing at low temperature and annealing in N2or O2containing medium at high temperature were investigated.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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