Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
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Published:2010-04
Issue:
Volume:645-648
Page:905-908
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Chung Gil Yong1,
Loboda Mark J.1,
Sundaresan Siddarth G.2,
Singh Ranbir2
Affiliation:
1. Dow Corning Compound Semiconductor Solutions
2. GeneSiC Semiconductor Incorporation
Abstract
Correlation between carrier lifetime and forward voltage drop in 4H-SiC PiN diodes has been investigated. PiN diodes from the drift layer of 20 m shows breakdown voltage of 3.3 kV and forward voltage drop as low as 3.13 V at 100A/cm2. Variation of calculated forward voltage drop ( ) from measured carrier lifetimes is very comparable to measured of fully processed PiN diodes. Measured carrier lifetime and of PiN diodes also show good spatial correlation. Wafer level lifetime mapping can be employed to assess and predict of PiN diodes.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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