The Impact of Schottky Barrier Tunneling on SiC-JBS Performance
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Published:2009-03
Issue:
Volume:615-617
Page:667-670
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Dolny Gary M.1,
Woodin Richard L.1,
Witt T.1,
Shovlin J.1
Affiliation:
1. Fairchild Semiconductor
Abstract
The impact of barrier tunneling on SiC-JBS performance is studied both experimentally and theoretically. We show that although the pinch-off effects associated with the JBS structure can significantly suppress the surface electric field, barrier tunneling still dominates the reverse behavior. Barrier tunneling determines the apparent breakdown voltage, as well as the apparent breakdown voltage vs. forward voltage drop trade-off of the JBS diode in practical applications.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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