Features of Hot Hole Transport in 6Н-SiC
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Published:2009-03
Issue:
Volume:615-617
Page:307-310
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Sankin Vladimir Ilich1,
Shkrebiy Pavel P.1,
Lepneva Alla A.1,
Ostroumov Andrey G.1,
Yakimova Rositza2
Affiliation:
1. Russian Academy of Sciences
2. Linköping University
Abstract
In materials with a small degree of ionicity ranging 10-15%, such as in SiC, carrier scattering on polar optical potential is possible. Unlike scattering on deformation potential, the drift mobility in this case increases continuously. As this phenomenon may be realized in SiC hot hole transport, I-F characteristics in 6H-SiC with Na-Nd ~ 5x1017 cm-3 have been studied at electrical field 1-150 kV/cm for temperature from 300 to 600K. Furthermore, we studied the breakdown of Al impurity.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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