Investigation of the Metal–Insulator Transition in n-3C-SiC Epitaxial Films
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Published:2009-03
Issue:
Volume:615-617
Page:335-338
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Lebedev Alexander A.1,
Abramov Pavel L.1,
Agrinskaya Nina V.1,
Kozub Ven I.1,
Kuznetsov Alexey N.1,
Lebedev Sergey P.1,
Oganesyan Gagik A.1,
Chernyaev A.V.1,
Shamshur Dmitrii1,
Skvortsova Maria O.2
Affiliation:
1. Russian Academy of Sciences
2. Institute of Solid State Physics
Abstract
n-type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their doping level and structural perfection. It was found that a metal--insulator transition occurs in the n-3C-SiC layer at concentrations Nd - Na ≤ 3 1017 cm-3.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science