Abstract
The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
7 articles.
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