Abstract
We have annealed the thin layer of the amorphous silicon (a-Si) using the Q-swtiched Nd:YAG laser pulses in order to transform the a-Si into polycrystalline silicon (poly-Si) and investigated the crystalline structures of the poly-Si. Before illuminating the light to the layer, the frequency of the laser was doubled through the second harmonic generation (SHG) process to enhance the absorption efficiency of the optical energy. When the optical energy was higher than 500 mJ/cm2, we could obtain the micro-crystalline structure with grain size as large as 500 nm.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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