Effect of Neutron Irradiation on Indium-Containing III-V Semiconductor Micromonocrystals-Reference-Cited by-同舟云学术

Effect of Neutron Irradiation on Indium-Containing III-V Semiconductor Micromonocrystals

Published:2013-03 Issue: Volume:543 Page:273-276
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Bolshakova Inessa¹,Ďuran Ivan²,Kost Yaroslav¹,Kovaljova Nelli¹,Kovarik Karel²,Makido Olena¹,Sentkerestiová Jana³,Shtabaliuk Agata¹,Shurygin Fedir¹,Viererbl Ladislav⁴

Affiliation:

1. Lviv Polytechnic National University

2. v. v. i., Association EURATOM/IPP.CR

3. Czech Technical University in Prague

4. Research Centre Rež

Abstract

The paper presents the results of the studies into the effect exerted by neutron irradiation on the parameters of microcrystals of III-V group semiconductor materials (InSb, InAs and their solid solutions). The values of optimum initial charge carrier concentration for each of the materials under research, which would allow them to retain maximum radiation resistance, have been determined. The obtained results can be employed in assessing the industrial semiconductor sensors operability in radiation environment.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.543.273.pdf

Reference6 articles.

1. I.A. Bolshakova, V.M. Boiko, V.N. Brudnyi, I.V. Kamenskaya, N.G. Kolin, E. Yu. Makido, T.A. Moskovets and D.I. Merkurisov: The effect of neutron irradiation on the properties of n-InSb whiskers, Semiconductors, 39 (7), 780-785 (2005).

2. V.N. Brudnyi, N.G. Kolin and L.S. Smirnov: The model of self-compensation and pinning of the Fermi level in irradiated semiconductors, Semiconductors, 41 (9), 1011-1020 (2007).

3. N.G. Kolin: Neutron-Transmutation Doping and Radiation Modification of Semiconductors: Current Status and Outlook, Russian Physics Journal, 46 (6), 543-551 (2003).

4. I. Bolshakova, I. Duran, R. Holyaka, E. Hristoforou, A. Marusenkov: Performance of Hall Sensor-Based Devices for Magnetic Field Diagnosis at Fusion Reactors, Sensor Letters, 5, 283-288 (2007).

5. I. Bolshakova, Ya. Kost, O. Makido, F. Shurygin: Mathematical simulation, synthesis, characterization and application of indium arsenide whiskers, Journal of Crystal Growth, 310 (7-9), 2254-2259 (2008).

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