Comprehensive Approach for the Construction of New Material for Electronic Multipliers

Abstract

Volatile Complexes Mg(thd)2(TMEDA) (1) and Cs[Y(ptac)4] (2) (Hthd = 2,2,6,6-Tetramethylheptane-3,5-Dione, TMEDA = N,N,N’,N’-Tetramethylethylenediamine, Hptac = 1,1,1- Trifluoro-5,5-Dimethylhexane-2,4-Dione) Were Synthesized and Characterized. Thermal Properties of (1) and (2) Were Investigated by TG. The Temperature Dependencies of Saturated Vapour Pressure of Compounds Were Measured by Static (for (1)) or Flow (for (2)) Method. The Obtained Data Were Used for Choosing Temperature Parameters of Deposition Mg- and Cs-Containing Films by CVD Using (1) and (2) as Volatile Precursors. MgO Thin Films Were Deposited on Si (100) by Low-Pressure CVD (LPCVD) and Pulse-CVD in Temperature Deposition Range 673-823K. Cs- and Mg,Cs-Containig Films Were Formed by LPCVD. The Deposited Films Were Studied by SEM and AFM, Correlations between Temperature Conditions of Deposition Processes and Film Characteristics Were Found.