Electrical Properties of SnS Films Deposited by Thermal Evaporation of Sulfurized Sn Powder

Abstract

Electrical properties of SnS films deposited by a thermal evaporation method have been investigated using the resistivity and thermopower measurements. The SnS films show p-type conduction at room temperature, and electrical activation energy of ~0.3 eV. Resistivity and Seebeck coefficient at room temperature were ~4×101 Ωm and +0.2 mV/K for as-deposited sample. The resistivity decreased ~1×100 Ω·m and the Seebeck coefficient increased +0.27 mV/K when the sample was annealed at 400 °C. Crystallization and structural change cause the improvement of electronic transport with annealing treatment.