Temperature Dependence of Resistivity of MoSi2-Si Composite Thin Films
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Published:2013-09
Issue:
Volume:582
Page:161-164
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ISSN:1662-9795
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Container-title:Key Engineering Materials
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language:
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Short-container-title:KEM
Author:
Kanai Ryo1,
Hikita Shinya1,
Sato Yuuki1,
Yoshikado Shinzo1
Abstract
The temperature dependence of resistivity for thin films of a composite of molybdenum disilicide (MoSi2) and silicon (Si) fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi2 and Si with molar ratio of Si to Mo of 1:X (2.02X2.55) was analyzed. The temperature dependence could be explained by the multiplicative model consisting of a conduction model similar to the Grüneisen-Bloch model, a modified Anderson localization model for 2.02X2.21 and the modified Anderson localization model for 2.39X2.55 over a wide temperature range.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
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