Abstract
Fabrication of a novel in-plane field emission diode structure is presented. Sub-micro metal tips were obtained using a two-step lithography method. The Minimum width of the metal tips was less than 100nm, and the minimum spacing of 145.7nm was obtained. The I-V characters in atmospheric environment before and after the silicon etching were measured.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science