Effect of Oxygen Partial Pressure on Properties of ZnO Films Deposited on Freestanding Diamond Films-Reference-Cited by-同舟云学术

Effect of Oxygen Partial Pressure on Properties of ZnO Films Deposited on Freestanding Diamond Films

Published:2013-03 Issue: Volume:544 Page:230-233
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Tang Ke¹,Wang Lin Jun¹,Huang Jian¹,Ren Bing¹,Zhou Jie¹,Le Jun¹,Xia Yi Ben¹

Affiliation:

1. Shanghai University

Abstract

Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of freestanding diamond (FSD) films by the direct current (DC) magnetron sputtering method in an oxygen (O2) + argon (Ar) gas mixture. The effect of oxygen partial pressure on properties of ZnO films was investigated by X-ray diffraction (XRD). The results showed that when flux ratio of argon to oxygen was 1, the ZnO films had a better crystalline quality.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.544.230.pdf

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