Affiliation:
1. Harbin Institute of Technology
Abstract
In this paper, a low-distortion fourth-order bandpass sigma-delta (ΣΔ) modulator is proposed based on a switched-capacitor resonator which employs double-sampling technique to relax the requirements for circuits and reduce opamp power consumption and chip area. The modulator is based on the low-distortion low pass ΣΔ modulator. The system level simulation results compare between the low-distortion architecture and the traditional one is given. The full differential circuit applying two-path technique is implemented with TSMC0.18µm CMOS process. It achieves a peak SNR (signal-to-noise ratio) of 85.9dB and DR (dynamic range) of 91dB with 200 kHz bandwidth centered at 20MHz which are better than the conventional bandpass ΣΔ modulator.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Cited by
2 articles.
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