Anisotropic Magnetoresistive Study in Bilayer NiFe-NiO for Sensor Applications

Author:

Morón Carlos1,Garcia Alfonso1,Tremps Enrique1,Somolinos Jose Andrés2

Affiliation:

1. E.U. Arquitectura Técnica (U.P.M.)

2. Universidad Politécnica de Madrid

Abstract

Related with the detection of weak magnetic fields, the anisotropic magnetoresistive (AMR) effect is widely utilized in sensor applications. Exchange coupling between an antiferromagnet (AF) and the ferromagnet (FM) has been known as a significant parameter in the field sensitivity of magnetoresistance because of pinning effects on magnetic domain in FM layer by the bias field in AF. In this work we have studied the thermal evolution of the magnetization reversal processes in nanocrystalline exchange biased Ni80Fe20/Ni-O bilayers with large training effects and we report the anisotropic magnetoresistance ratio arising from field orientation in the bilayer.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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