GIAXD and XPS Characterization of sp3C Doped SiC Superhard Nanocomposite Film

Abstract

The sp3C doped SiC superhard nanocomposite films had been deposited on stainless steel (SS) substrates at different temperature by electron beam-physical vapor deposition (EB-PVD). The sp3C doped SiC film was studied by grazing incidence X-ray asymmetry diffraction (GIAXD), and X-ray photoelectron spectroscopy (XPS). The results of GIAXD showed that the sp3 doped SiC nanocomposite films were not perfect crystalline, which was composed with fine SiC nanocrystals, and a second phase very similar with diamond like carbon (DLC). XPS analysis showed that the excess C existing in films and turned from diamond into DLC from the surface to inner of film.