Sensitive Elements of High Temperature Pressure Sensors Formed from a Doped Polycrystalline Diamond

Author:

Vysotina Elena1,Rizakhanov Razhudin1,Sigalaev Sergey1,Polushin Nikolay2,Shokorov Vadim3,Mishanin Aleksandr3

Affiliation:

1. SSC FCUE «Keldysh Research Centre»

2. National University of Science and Technology “MISIS”

3. SC «State Research Institute of Physical Measurements»

Abstract

The need to create highly accurate pressure sensors that capable operate under extreme conditions in aviation, rocket and space equipment increases and becomes more relevant. The unique properties of diamond make it a promising material for microelectronic sensors. Sensitive elements of pressure sensors were developed where a resilient element is formed from silicon but resistance strain gauges are formed from a boron-doped polycrystalline diamond film.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. I.V. Polzunov, A.A. Rodionov and V.A. Shokorov, Ways to increase reliability semiconductor pressure sensors in the composition of space vehicles with increased term of active existence, J. Reliability and quality of complex systems 2 (2015) 94-97.

2. G.W. Hunter, P.G. Neudeck, R.S. Okojie, J.A. Powell and L. Chen, An overview of high-temperature electronics and sensor development at NASA Glenn Research Center, Journal of turbomachinery 125 (2003) 658-664.

3. I.N. Barinov, Semiconductor strain gauge pressure sensors based on silicon-on-insulator structure, J. Components and technologies 5 (2005) 12-15.

4. I.N. Barinov, V.S. Volkov, V.V. Kikot and S.K. Sigalaev, Temperature compensation of semiconductor pressure sensor for high temperature operation, J. Instruments and Systems: Monitoring, Control and Diagnostics 10 (2015) 34-39.

5. Y.V. Pleskov, Electrochemistry of a diamond, Editorial URSS, Moscow, (2003).

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