Affiliation:
1. University of Technology
Abstract
The chemical bath deposition method was employed to prepare Ag2O films at specific preparation conditions. Silicon substrate with different conductivity was used to study their effect on the electrical and photovoltaic properties of the prepared devices. The current-voltage properties reveal that the ideality factor was (2.4 and 3.36) for psi and n-si substrate respectively. The obtained device efficiency is 0.35 while maximum detectivity was 0.3 cm.Hz1/2W-1.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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