Affiliation:
1. CNR-IMM unit of Bologna
2. University of Parma
3. Paul Scherrer Institute
4. ETH Zurich
Abstract
Van der Pauw devices have been fabricated by double ion implantation processes, namely P+ and Al+ co-implantation. Similarly to the source area in a SiC VD-MOSFET, a 5 × 1018 cm-3 P plateau is formed on the top of a buried 3 × 1018 cm-3 Al distribution for electrical isolation from the n- epilayer. The post implantation annealing temperature was 1600 °C. Annealing times equal to 30 min and 300 min have been compared. The increase of the annealing time produces both an increase of electron density as well as electron mobility. For comparison a HPSI 4H-SiC wafer, 1×1020 cm-3 P+ ion implanted and 1700 °C annealed for 30 min was also characterized.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. S. Blanqué, J. Lyonnet, R. Pérez, P. Terziyska, S. Contreras, P. Godignon, N. Mestres, J. Pascual, and J. Camassel, Full wafer size investigation of N+ and P+ co-implanted layers in 4H–SiC, phys. stat. sol. (a) 202 (2005) 698–704.
2. M.A. Capano, R. Santhakumar, R. Venugopal, M.R. Melloch, and J.A. Cooper, Jr, Phosphorus Implantation into 4H-Silicon Carbide, J. Electr. Mater. 29 (2000) 210-214.
3. M. Laube, F. Schmid, G. Pensl, G. Wagner, M. Linnarsson, M. Maier, Electrical activation of high concentrations of N and P ions implanted into 4H–SiC, J. Appl. Phys. 92 (2002) 549-554.
4. R. Nipoti, A. Carnera, G. Alfieri, L. Kranz, About the electrical activation of 1×1020 cm-3 ion implanted Al in 4H-SiC at annealing temperatures in the range 1500 - 1950°C, Mater. Sc. Forum 924 (2018) 333-338.
5. R. Nipoti, A. Parisini, V. Boldrini, S. Vantaggio, M. C. Canino, M. Sanmartin, and G. Alfieri, 3×1018 - 1×1019 cm-3 Al+ ion implanted 4H-SiC: annealing time effect, accepted for presentation at ICSCRM2019, Poster Mo-P-31.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献