Affiliation:
1. SKC, Advanced Technology R&D Center
2. Dong-Eui University
Abstract
6-inch 4H-SiC crystal ingot was successfully separated from a seed holder by the contraction enhancement of adhesive. The resin used as an adhesive with 10~30% in contraction ratio during the cooling was selected. The crack between seed holder and grown SiC crystal was observed to be formed after the cooling procedure and the crystal was easily separated from the seed holder without any machining process for the separation. The warp value and the rocking curve value of SiC crystal grown with modified adhesive was observed to be smaller than those of SiC crystal with conventional method.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference4 articles.
1. Y. M. Tairov, V.F Tsevtkov, General principles of growing large-size single crystals of various silicon carbide polytypes, J. Crystal Growth. 52 (1981) 146-150.
2. Y. Tupitsyn, A. Arjunan, R. T. Bondokov, R. M. Kennedy, T. S. Sudarshan, A Study of 6H-seeded 4H-SiC bulk growth by PVT, Mater. Sci. Forum. 483-485 (2005) 21-24.
3. I. Manning, J. Zhang, B.Thomas, E. Sanchez, D. Hansen, D. Adams, G. Y. Chung, K. Moeggenborg, C. Parfeniuk, J. Quast, V. Torres, C. Whiteley , Large area 4H SiC products for power electronic devices, Mater. Sci. Forum. 858 (2016) 11-14.
4. S. Nishino. Y. Kojima, J. Saraie, Springer proceeding in Physics, in: G. L. Harris, M. Spencer, C.Y.-W Yang (Eds.), Amorphous and Crystalline Silicon Carbide III, Springer-Verlang, New York, (1992).
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