Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST)
2. R&D Partnership for Future Power Electronics Technology (FUPET)
Abstract
Threshold voltage (VTH) of SiC-MOSFETs on various crystal faces has been investigated systematically using the same bias-temperature-stress (BTS) conditions. In addition, dependences of gate-oxide-forming process on VTH instability is also discussed. Nitridation treatments such as N2O and NH3 post-oxidation annealing (POA) are effective in stabilization of VTH under both positive-and negative-BTS tests regardless of crystal face. On the other hand, serious VTH instability was confirmed in MOSFETs with gate oxide by pyrogenic oxidation followed by H2 POA.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
15 articles.
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