Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals

Author:

Sato Shinya1,Fujimoto T.1,Tsuge H.1,Katsuno M.1,Ohashi W.1

Affiliation:

1. Nippon Steel Corporation

Abstract

6H-type stacking faults (SFs) observed in PVT-grown 4H-SiC ingle crystals were investigated using Photoluminescence (PL) microscopy at room temperature. Structural analyses using high resolution X-ray topography have revealed that there exist no (n=4, 8) component in Burger’s vectors of the 6H-type SFs we observed, strongly suggesting that the 6H-type SFs are constructed either by insertions of very thin 6H-type foreign polytype inclusions or by successive repetitions of Shockley-type in-plane glides.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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