SiC Growth by Solvent-Laser Heated Floating Zone

Author:

Woodworth Andrew A.1,Neudeck Philip G.1,Sayir Ali1,Spry David J.1,Trunek Andrew J.2,Powell J. Anthony3

Affiliation:

1. NASA Glenn Research Center (GRS)

2. OAI, Ohio Aerospace Institute

3. NASA Glenn

Abstract

In an effort to grow single crystal SiC fibers for seed crystals the following two growth methods have been coupled in this work: traveling solvent and laser heated floating zone to create the solvent-laser heated floating zone (Solvent-LHFZ) crystal growth method. This paper discusses the results of these initial experiments, which includes, source material, laser heating, and analysis of the first ever SiC crystals (confirmed by synchrotron white beam x-ray topography)

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Rapid silicon carbide micro-crystal growth by high power CO2 laser;Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XI;2017-08-23

2. Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy;Journal of Electronic Materials;2015-11-25

3. Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique;Journal of Crystal Growth;2014-04

4. Rugged Electrical Power Switching in Semiconductors: A Systems Approach;Proceedings of the IEEE;2014-01

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