Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface

Abstract

We investigated the effects of the post-oxidation annealing (POA) atmosphere on the electrical properties and interfacial roughness of SiO2 deposited on a 4H-SiC (0001) face and SiC. POA in ammonia (NH3) gave MOS capacitors with a lower interface trap density and n-channel MOSFETs with higher field-effect mobility than POA in nitrous oxide (N2O) or nitrogen (N2). In contrast, POA in N2O gave a lower interface trap density than POA in N2, but it gave the lowest field-effect mobility of all the samples. Cross-sectional TEM observations revealed that N2O POA gave a higher interfacial roughness than NH3 POA. We thus considered that N2O POA degraded the inversion-layer mobility due to increased roughness scattering.