Affiliation:
1. Russian Academy of Sciences
2. Rensselaer Polytechnic Institute
3. CREE, Incorporation
Abstract
We report on switch-on of 12 kV, 1cm2 optically triggered 4H-SiC thyristor fabricated by CREE Inc., to Imax=270 А with current rise time of ~ 3 s. Temperature dependence of holding current Ih in this thyristor has been experimentally studied in the temperature range from 300 to 425 K. It is shown that measurements of Ih temperature dependence under condition of optical switch-on at small anode bias and large load resistance reveal the existence of a ”weak point” within the optical window. This point is characterized by a much smaller critical charge than that within the remaining part of the window.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献