Affiliation:
1. General Electric Global Research Center
Abstract
Bipolar degradation in 4H-SiC thyristors subjected to high current density stress is reported. The thyristor device structure, its fabrication process as well as testing conditions are described. The Electron Beam Induced Current (EBIC) technique was used for defect analysis in testing of both degraded and non-degraded devices. Possible nucleation sites responsible for the generation of observed defects in degraded devices are discussed
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
3 articles.
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