Affiliation:
1. TranSiC /Fairchild Semiconductor.
2. Microsemi Corporation
3. Auburn University
4. Wright-Patterson Air Force Base
Abstract
An all SiC 600V / 6 m hermetic half-bridge power module has been developed to operate at ambient temperatures of 200oC and with junction temperatures near 250oC. The modules use SiC trench JFET technology and can output over 100A at Tj=250oC. Double pulsed switching was performed up to temperatures of 150oC with a measured total switching energy of 0.73mJ
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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