Design of an Integrated SiC JFET Power Switch and Flyback Diode

Abstract

In this paper, we describe the design of a high voltage SiC VJFET monolithically integrated with a JBS diode. The integrated device that was demonstrated up to 834 V in forward blocking doesn’t add any steps to the VJFET fabrication process. While the diode and VJFET share the same surface field termination mechanism, they are partially isolated using implanted field rings. We describe TCAD based optimization of the dimensions of these field rings and outline the design of the JBS diode using a fully analytical 2-D model.