SixCy Thin Films Deposited at Low Temperature by DC Dual Magnetron Sputtering: Effect of Power Supplied to Si and C Cathode Targets on Film Physicochemical Properties

Abstract

A DC dual magnetron sputtering system with graphite (C) and silicon (Si) targets was used to grow stoichiometric and non-stoichiometric silicon carbide (SixCy) thin films at low temperature. Two independently DC power sources were used to enable the total discharge power be shared, under certain proportions, between the Si and C magnetron cathodes. The motivation was to control the sputtering rate of each target so as to vary the stoichiometric ratio x/y of the deposited films. The species content, thickness and chemical bonds of as-deposited SixCy films were studied by Rutherford backscattering spectroscopy (RBS), profilometry analysis and Fourier transform infrared absorption (FTIR), respectively. Overall, the present work reveals a new reliable plasma sputtering technique for low temperature growth of amorphous SixCy thin films with the capability of tuning the degree of formation of a-SiC, a-Si and a-C bonds in the film bulk.