Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

Abstract

The energy dissipation capabilities of a 1200 V, 0.1 cm2 JFET operating in blocking mode were investigated. These devices, which are used in bidirectional circuit breaker applications, can conduct a current of 13 A in forward-conduction mode, and typically block a voltage up to 1200 V in blocking mode. In this document, the blocking limits of the device were pushed slightly to the point where avalanche breakdown occurs. A high voltage pulse generator was designed and constructed to drive the JFET into this state and to monitor the dissipated energy. The devices were able to handle up to 18.14 mJ.