Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates-Reference-Cited by-同舟云学术

Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates

Published:2013-01 Issue: Volume:740-742 Page:185-188
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Schimmel Saskia¹,Kaiser Michl²,Hens Philip¹,Jakubavicius Valdas¹,Liljedahl Rickard¹,Sun Jian Wu¹,Yakimova Rositza¹,Ou Yi Yu³,Ou Hai Yan³,Linnarsson Margareta K.⁴,Wellmann Peter J.²,Syväjärvi Mikael¹

Affiliation:

1. Linköping University

2. University of Erlangen-Nuremberg

3. Technical University of Denmark

4. KTH Royal Institute of Technology

Abstract

Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.740-742.185.pdf

Reference8 articles.

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4. M. Syväjärvi et al., J. Crystal Growth 197 (1999) pp.155-162.

5. P. Wellmann et al., J. Crystal Growth 275 (2005) e555-e560.

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