Abstract
Circuit simulation is of assistance to design and evaluate a power conversion circuit. A compact and accurate power device model is indispensable for obtaining appropriate circuit simulation results. This paper studies the compact equivalent circuit modeling of SiC Schottky Barrier diode (SiCSBD) and evaluates the developed model in turn-off switching operation. Two SiCSBDs having different specification are modeled and evaluated in this paper. The results show that the switching characteristics of SiCSBDs can be modeled with the equivalent circuit, whose configurations and parameters are identified from static I-V and C-V characteristics.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference4 articles.
1. A. R. Hefner, et al., SiC Power diodes provide breakthrough performance for a wide range of applications, IEEE Transactions on Power Electronics, Vol. 16, No. 2, pp.273-280, (2001).
2. G. Massobrio, et al. Semiconductor Device Modeling with SPICE, second edition, McGRAW-HILL, pp.1-43, (1993).
3. T. Funaki, et al., Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices, IEEE trans. PELS, Vol. 24, No. 6 pp.1486-1493(2009).
4. A. Castellazzi, et al., Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications, Microelectronics Reliability, Vol. 46, pp.1754-1759, (2006).