Affiliation:
1. Institute of Electron Technology
2. ACREO AB
Abstract
In this work the band diagrams of different MOS structures based on 3C-SiC substrate were determined. This has been achieved by application of many measurement techniques allowing determination of many electric parameters of the investigated structures. These parameters allowed to construct complete band diagrams which are demonstrated for two modes: for the flat-band state in the semiconductor and for the flat-band state in the dielectric.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
2 articles.
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