Affiliation:
1. R&D Partnership for Future Power Electronics Technology
2. Toyota Central R&D Laboratories Inc.
3. Denso Corporation
Abstract
A reduction in threading screw dislocation (TSD) density in 4H-SiC (silicon carbide) crystal is required for SiC power devices. In this study, TSD’s transformation by the RAF (repeated a-face) growth method [1] is observed by transmission X-ray topography (g=0004) of the cross-section of the crystal. Increasing the number of repetitions of a-face growth and offsetting c-face growth to an angle of several degrees reduce TSDs. TSD density is reduced to 1.3 TSD/cm2. The RAF growth method is very effective towards growing high quality SiC crystals.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
14 articles.
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