Abstract
The recent development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key enabling step in the realisation of low power circuitry for high temperature applications, such as aerospace and well logging. This paper describes investigations into the properties of the gate dielectric as part of the development of the technology to realize monolithic fabrication of both n and p channel devices. A comparison of the oxide quality of the silicon carbide CMOS transistors is performed to examine the feasibility of this technology for high temperature circuitry.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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