A Reduction of Defects in the SiO<sub>2</sub>-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)-Reference-Cited by-同舟云学术

A Reduction of Defects in the SiO₂-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)

Published:2012-05 Issue: Volume:717-720 Page:777-780
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Speer Kevin M.¹,Neudeck Philip G.²,Mehregany Mehran³

Affiliation:

1. SemiSouth Laboratories, Inc

2. NASA Glenn Research Center (GRS)

3. Case Western Reserve University

Abstract

The SiC vacuum field-effect transistor (VacFET) was first reported in 2010 as a diagnostic tool for characterizing the fundamental properties of the inverted SiC semiconductor surface without confounding issues associated with thermal oxidation. In this paper, interface state densities are extracted from measurements of threshold voltage instability on a SiC VacFET and a SiC MOSFET. It is shown that removing the oxide can reduce the interface state density by more than 70%.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.717-720.777.pdf

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