Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si-Reference-Cited by-同舟云学术

Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si

Published:2012-05 Issue: Volume:717-720 Page:505-508
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Feng Zhe Chuan¹,Chen Cheng²,Xu Qiang¹,Mendis Suwan P.³,Jang Ling Yun⁴,Tin Chin Che³,Lee Kung Yen¹,Liu Chee Wee¹,Wu Zheng Yun⁵,Qiu Zhi Ren²

Affiliation:

1. National Taiwan University

2. Sun Yat-Sen University

3. Auburn University

4. National Synchrotron Radiation Research Center

5. Xiamen University

Abstract

FTIR, Visible and UV Raman scattering, as well as synchrotron radiation X-ray absorption, in combination, have been employed to investigate a series of CVD grown 3C-SiC/Si (100). Significant results on the optical and atomic bonding properties are obtained from these comparative studies.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.717-720.505.pdf

Reference18 articles.

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