Mechanism of Secondary Recrystallization in Grain-Oriented Si Steel

Author:

Ushigami Yoshiyuki1,Nakamura Shuichi1

Affiliation:

1. Nippon Steel Corporation

Abstract

On the basis of Hillerts model of grain growth, a new model of Goss secondary recrystallization in silicon steel has been developed in which inhibitor and grain boundary energy are taken into account. An analysis shows that these two parameters synergistically affect secondary recrystallization and Goss grain evolves to a coarse grain as inhibitor intensity increases and statistical grain boundary energy decreases. This model successfully explains Goss secondary recrystallization.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

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5. T. Nakayama, Y. Ushigami: Proc. 7th RISO Int. Symp. Met. Mat. Sci. (1986), p.463.

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Secondary recrystallization in grain-oriented silicon steel;IOP Conference Series: Materials Science and Engineering;2021-03-01

2. Secondary Recrystallization in Metals: Approach by Solid-State Wetting;Korean Journal of Metals and Materials;2014-09-05

3. Orientation Selectivity of Secondary Recrystallization in Grain-Oriented Silicon Steel;Materials Science Forum;2013-03

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