Affiliation:
1. Chinese Academy of Sciences
2. High Energy Accelerator Research Organization (KEK)
Abstract
The annihilation behavior of positronium in N and P type porous silicon is investigated via positron annihilation lifetime (PAL) and positronium time-of-flight (Ps-TOF) measurements. The result shows the N type sample has smaller positronium annihilation fraction and more interconnected pores. The microstructure of Rapid Thermal Oxidation (RTO) treated N type porous silicon also studied using PAL spectroscopy, and the relationship between its photoluminescence properties and porous structure was discussed.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
5 articles.
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