Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates
-
Published:2014-02
Issue:
Volume:778-780
Page:1170-1173
-
ISSN:1662-9752
-
Container-title:Materials Science Forum
-
language:
-
Short-container-title:MSF
Author:
Okano Motochika1, Edamoto Daiki1, Uchida Kentaro1, Omura Ichiro1, Ikari Tomonori2, Nakao Motoi3, Naitoh Masamichi1
Affiliation:
1. Kyushu Institute of Technology 2. Ube National College of Technology 3. Kitakyushu National College of Technology
Abstract
We investigated the effect of ion-beam irradiation of the 3C-SiC(111) surface on the growth of graphene by the SiC surface-decomposition method. When a 3C-SiC(111) surface was irradiated by 1 keV Ar+ions at a dose of 4.5 × 1015cm2in an ultra-high-vacuum chamber and then annealed at 1200 °C for 1 min, the formation of graphene layers was promoted in comparison with that in the absence of ion-beam irradiation. X-ray photoelectron spectroscopy studies showed that Ar ion bombardment of the 3C-SiC(111) caused breakage of surface bonds and helped Si atoms to desorb from the surface.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. S.V. Morozov, K.S. Novoselov, M.I. Katsnelson, F. Schedin, D.C. Elias, J.A. Jaszczak, A.K. Geim, Giant intrinsic carrier mobilities in graphene and its bilayer, Phys. Rev. Lett. 100 (2008), 016602. 2. S. Bae, H. Kim, Y. Lee, X. Xu, J. -S. Park, Y. Zheng, J. Balakrishnan, T. Lei, H.R. Kim, Y.I. Song, Y. -J. Kim, K.S. Kim, B. Özyilmaz, J. -H. Ahn, B.H. Hong, S. Iijima, Roll-to-roll production of 30-inch graphene films for transparent electrodes, Nat. Nanotechnol. 5 (2010). 3. H. Ago, K. Kawahara, Y. Ogawa, S. Tanoue, M.A. Bissett, M. Tsuji, H. Sakaguchi, R.J. Koch, F. Fromm, T. Seyller, K. Komatsu, K. Tsukagoshi, Epitaxial growth and electronic properties of large hexagonal graphene domains on Cu(111) thin film, Appl. Phys. Exp. 6 (2013). 4. W.A. de Heer, C. Berger, X.S. Wu, P.N. First, E.H. Conrad, X.B. Li, T. Li, M. Sprinkle, J. Hass, M.L. Sadowski, M. Potemski, G. Martinez, Epitaxial graphene, Solid State Commun. 143 (2007), 92–100. 5. W. Norimatsu and M. Kusunoki, Transitional structures of the interface between graphene and 6H–SiC (0 0 0 1), Chem. Phys. Lett. 468 (2009), 52–56.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
|
|