Affiliation:
1. Japan Fine Ceramics Center
Abstract
High temperature (>1000 °C) chemical etching using molten KCl or molten KCl+KOH as the etchant has been carried out to remove the mechanical-polishing (MP) induced damage layer from 4H-SiC surface. Atomic force microscopy observations have shown that line-shaped surface scratches that have appeared on the as-MPed surface could be completely removed by KCl-only etching or by KCl+KOH etching (KCl:KOH=99:1 in weight) at ~1100 °C. Between the two recipes, KCl+KOH etching has shown a higher etch rate (6~7 times) and is able to remove ~9 μm and ~36 μm-thick damage layer from the Si (0001) and the C(000-1) surface, respectively. Besides, KCl+KOH etching seems to have formed a Si (0001) surface covered with atomic steps while KCl-only etched surface is featured with nanometer-scale pores.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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