I - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient Temperatures

Abstract

The physical and electrical properties of p+-Si/n-4H-SiC and n+-Si/n-4H-SiC heterojunctions fabricated by using surface-activated bonding (SAB) were investigated by scanning electron microscopy (SEM), current-voltage (I-V) and breakdown characteristics measurements at raised ambient temperatures. The I-V characteristics for the reverse bias voltages of the two junctions were compared with the expectations based on Frenkel-Poole, and trap-assisted tunneling models. The results of calculations using the trap-assisted tunneling model were close to the measurements.