Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
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Published:2012-05
Issue:
Volume:717-720
Page:211-216
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Gällström Andreas1, Magnusson Björn2, Beyer Franziska Christine1, Gali Adam3, Son Nguyen Tien1, Leone Stefano1, Ivanov Ivan G.1, Henry Anne1ORCID, Hemmingsson Carl G.1, Janzén Erik1
Affiliation:
1. Linköping University 2. Norstel AB 3. Hungarian Academy of Sciences
Abstract
A commonly observed unidentified photoluminescence center in SiC is UD-1. In this report, the UD-1 center is identified to be tungsten related. The identification is based on (i) a W-doping study, the confirmation of W in the samples was made using deep level transient spectroscopy (DLTS), (ii) the optical activation energy of the absorption of UD-1 in weakly n-type samples corresponds to the activation energy of the deep tungsten center observed using DLTS. The tungsten-related optical centers are reported in 4H-, 6H-, and 15R-SiC. Further, a crystal field model for a tungsten atom occupying a Si-site is suggested. This crystal field model is in agreement with the experimental data available: polarization, temperature dependence and magnetic field splitting.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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