Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals

Author:

Fujimoto Tatsuo1,Ohtani Noboru2,Sato Shinya1,Katsuno Masakazu1,Tsuge Hiroshi1,Ohashi Wataru1

Affiliation:

1. Nippon Steel Corporation

2. Kwansei Gakuin University

Abstract

Sublimation-recrystallization processes occurring during PVT are investigated from the viewpoint of quasi-equilibrium phase transitions of SiC. In addition to the elemental reaction processes of PVT, other phenomena such as silicon droplet formation and in-situ etching are also discussed based upon the Si-C binary phase diagram, and possible mechanisms are proposed.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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